Investigation Performance of p-type Junctionless Field Effect Transistors with InGaP, InP and Si Channel Materials

In this paper, using non-equilibrium Green's function method, the performance of junctionless transistors that are with Si, InP, and InGaP channels material are investigated.The shape of transistor’s gate is chosen as gate all around (GAA). Parameters such as DIBL, subthreshold slope (SS), OFF-state current, ON-state current and ON/OFF current ratio in these devices are investigated. The main problem of the junctionless transistors is the OFF-state current and the subthreshold slope. By choosing materials with a large bandgap and a high density of valence state, it is possible to reduce the OFF-state current without noticeable reducing of the ON-state current. Therefore, device with InGaP channel material has better characteristics in terms of OFF-state and the SS. The values of DIBL, SS, OFF-state current, ON-state current and ON/OFF current ratio in gate length 10 nm are 14 mV / V, 61.1 mV/ dec, 2.26×10-15A, 5.94×10-6A, and 2.62×109.