Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT

In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. Bandwidth of proposed high power amplifier is 2 MHz and we have achieved 49% Power Added Efficiency (PAE). We have designed a band pass filter for decreasing of memory effects in output. The active on chip area of layout obtained 35 mm2 (8.2 mm × 4.3 mm). We have obtained AM/PM and AM/AM, -3.8deg and 1 dB respectively in the worst case. The proposed power amplifier is unconditionally stable at the satisfied frequency range.