Design, Simulation and Fabrication of Broadband Class-E Power Amplifier Using Double-Reactance Compensation Technique and Second and Third Harmonic Control Circuits

In this paper, the analysis, simulation and fabrication of high-efficiency broadband parallel-circuit Class-E power amplifier (PA) for satellite communication systems has been presented. The PA’s broadband characteristics are achieved through analysis of the load network using double reactance compensation technique, second and third harmonic control circuits. The proposed circuit has been simulated by ADS 2014 and simulated results by ideal and real elements have been evaluated. A high power LDMOS transistor AFT09MS007N was used as an active device. Then for validation, a prototype of the proposed PA has been fabricated and tested. The measured results show that the drain efficiency (DE) and power added efficiency (PAE) are more than 75% and 69% over 400-460 MHz frequency range, respectively. In addition, the maximum values DE of 83% and PAE of 75% for input power of 27 dBm and drain voltage of 12 V has been obtained. Finally, the simulated and measured results are in a good agreement.