Mathematical modeling and simulation of the growth of ZnO thin films in Ar/O2 plasma

Considering the importance of zinc oxide thin films (ZnO) in the fabrication of sensors and solar cells, this study aims to analyze and simulate the ZnO growth process by magnetron sputtering system. In this regard, the mathematical model in RSD2013 software was studied and then the results of the simulation of the ZnO growth process in plasma Ar/O2, have been analyzed. The accurate time-dependent differential equations used in this software, model some of the physical phenomena, including as the chemical absorption of reactive gas through the target and the substrate, the direct and knock-on implantation of reactive gas particles in the target, the formation of compound components in subsurface of the target, the deposition of sputtered particles on the substrate surface while returning the fraction of those particles to the target, and the redeposition of sputtered particles on the target surface. The results of the simulation will be helpful in improving the quality of fabricated ZnO thin films growth by reactive sputtering system.