Negative-Capacitanc Field Effect Nano Transistor Basedon a Two-Dimensional Ferroelectric In2Se3

This work proposes and presents a study of a negative-capacitance field effect nano transistor (NCFET) based on two dimensional α-In2Se3 as the ferroelectric in order to reduce the sub-threshold swing. Phase transition as well as Curie temperatures of monolayer α-In2Se3 were studied, by employing Monte Carlo and ab-initio molecular dynamics simulations. The estimated Curie point is above room temperature, making monolayer α-In2Se3 a promising candidate for negative-capacitance field effect nano transistor devices. The Landau constants of monolayer α-In2Se3 are extracted which were utilized for analyzing the characteristics of a negative capacitance-field effect transistor with a monolayer MoS2 as the channel material. Sub-threshold swings in the range of 27-59 mV/dec for ferroelectric thicknesses between 25-5 nm were achieved.