Effects of Interdiffusion and Temperature on Optoelectronic Properties of In(1-x)Ga(x)As/InAs/In(1-y)Al(y)As Quantum Well

The effect of interdiffusion of ,  and  atoms on potential profile, energy levels and ground state probability density of electron in  quantum well is investigatend for small values of diffusion length in the framework of first order perturbation theory. It is shown that interdiffusion leads to an asymmetric profile for the potential and to the rise up of energy levels and to the increase of localization degree of the probabilitily density with a small shift across the growth axis. The spontaneous effects of interdiffusion and temperature on chemical potential energy and the intersubband absorption coefficient is investigated in the mentioned structure as well. It is shown that for a given value of diffusion length, the chemical potential decreases with the increase of temperature, and also for a given value of temperature the chemical potential increases with the increase of diffusion length. It is also shown that the increase of diffusion length leads to a considerable decrease in intersubband absorption coefficient and to the blue shift of its spectrum.