Modeling Graphene-based Resonant Tunneling Filed Effect Transistor with two Coupled Quantum Dots

In this paper, a new Graphene-based field effect transistor (FET) with resonant tunneling transport is introduced and modeled which is also applicable for many other non-graphene, flat two dimensional structures with energy gap. As like other graphene-based FETs, the current passes through semiconducting 2D GNR. But here by adopting P-type source and drain as well as a special geometry of gate contact, the GNR channel is turned into two coupled quantum dots in series. The coupling between Dots and sizes of Dots determine the current characteristic of the device. Resonant tunneling is observed in current-voltage characteristic of the device.