جستجوی مقالات مرتبط با کلیدواژه « electrostatic potential » در نشریات گروه « فیزیک »

The electronic ,band offset and magnetic properties of Mn2FeAl /GaAs are investigated by first-principles calculations using density functional theory with generalized gradiant approgximation (GGA).The Mn - Mn/Ga interface is stable in terms of energy. The simultaneous analysis of the shotkey barriers and the electrostatic potential for this structure indicates the type III band alignment, where the valence band edge of Mn2FeAl is higher than that of conduction band edge of Gallium arsenide. We find a valence band offset (VBO) of 1.54eV and conduction band offset(CBO) of 1.39eV. Hence, Mn2FeAl /GaAs (001) is recommended for GMR and TMR applications. There was an electrostatic potential difference of 0.056 μV and also half-metallic behavior in this interface.

Inside living cells, many essential processes involve deformations of charged helical molecules and interactions between them. Actin filaments and DNA molecules are important examples of charged helical molecules. In this paper, we consider an impermeable double stranded charged molecule in the solvent. According to nature, the dielectric constant of the molecule is considerably different from the dielectric constant of the bulk. In order to calculate the electrostatic potential in the problem in the Debye-Huckel regime, we find the proper Debye-Huckel Green function for the problem. Using this Green function, we calculate the electrostatic potential in the system. Furthermore, we study the dependence of the electrostatic potential to the dielectric inhomogeneity, structural parameters and the salt concentration. This study could shed some light on the role of electrostatic interactions in many essential processes involving charged helical molecules such as actin filaments and DNA molecules.