جستجوی مقالات مرتبط با کلیدواژه « Spray pyrolysis » در نشریات گروه « فیزیک »

Copper antimony sulphide (CuSbS2) is a semiconductor with narrow band gap and a potential absorber material for applications in various optoelectronic devices like infrared detectors and solar cells. In this paper, CuSbS2 thin films were deposited by spray pyrolysis technique on glass substrates at a temperature of 3000 ℃, using cupric chloride, antimony chloride, and thiourea as precursors. The samples were prepared by varying the antimony concentration (0.1M, 0.15M, and 0.2M) at a pressure of 3.5 bar and a solution flow rate of 2 ml/min for 5 minutes, while the precursor solutions of Cu:S molar ratio (0.1:0.2) was maintained. Elemental, morphological, optical, and structural characterization of these films was done from data obtained from energy dispersive X-ray fluorescence (EDXRF), UV-VIS spectrophotometer, scanning electron microscope (SEM) and X-Ray diffraction (XRD) respectively. The prepared thin films were polycrystalline with a preferential peak at (111).  Electrical properties of the thin films were obtained by simulating the UV-VIS spectra in SCOUT software using the Drude and Kim oscillator model. Deposited films have a band gap range of 1.84 – 1.98 eV, conductivity range of 199.59 – 204.67 Ω-1cm-1, and carrier concentration range of 1.12×1019 - 1.27×1019  cm-3.

The present paper reports on the effect of substrate temperature on the physical properties of zinc oxide (ZnO) thin films deposited using spray-pyrolysis technique. The films exhibit a polycrystalline nature with a preferred orientation along [002]. Furthermore, the average crystallites size increases with increasing the substrate temperature. The scanning electron microscopy results showed that the films were evenly distributed and homogeneous. The average optical transmittance varies in the range of 62 to 90% depending on the substrate temperature. On the other hand, with increasing the substrate temperature, the absorption coefficient decreases and the optical band gap varies in the range of 3.25 - 3.28 eV. The electrical conductivity of films varies between 18 and 58 mS.cm-1.

Boron (B) is considered as an important impurity in semiconductor physics and optoelectronic devices, especially to produce p-type silicon (p-Si). In this paper, we investigate the effect of Boron doping on the structural, electrical, optical, and photo-sensitivity properties of tin oxide (SnO2) semiconductor thin films. Boron doped tin oxide (SnO2: B) thin films were deposited on glass substrates at Ts=500 ͦ C for different atomic concentration of x=[B/Sn] = 0, 0.02, 0.04, 0.08, 0.10, 0.20, 0.30, and 0.50 by spray pyrolysis technique.The results of X-ray diffraction (XRD) analysis show the tetragonal rutile SnO2 structure with orientation along the (211) plane. The films have polycrystalline structure with granular and island-like grains morphology by Field-Emission Electron Microscope (FE-SEM). The SnO2:B films have shown n-type conductivity and decreasing - increasing behavior of electrical resistivity with B-doping for x ≤ 0.04 and x> 0.04, respectively. Also, carrier concentrations were obtained in the order of 1018-1020 cm-3. Average optical transmittance of SnO2:B thin films changed in the range of 65% to 87% in the visible region and SnO2:B (x=0.08) sample has highest transmittance. The optical gap of films was obtained in the range of 3.47-3.87 eV. From the photoconductive results, the x=0.50 film has exhibited the most optical sensitivity under light radiation.