جستجوی مقالات مرتبط با کلیدواژه « Single Electron Transistor » در نشریات گروه « علوم پایه »

The single electron transistor (SET) is nanoscale device that can be utilized in future integrated circuits. It contains three electrodes and one island that is located between them. The island material impacts on SET performance. Therefore graphene with unique properties is selected for the island material with compressive stress and tensile strain imposed on it. In this paper, an appropriate mathematical model is derived for the device current taking the impact of compressive stress and tensile strain on the graphene nanoribbon (GNR) island into account. Moreover, the impact of numbers of atoms along the GNR length and applied gate voltage are investigated and the obtained I-V curves are compared together. Furthermore, the SETs island are designed and their band structures are plotted and then their band gaps are calculated. The charge stability diagrams of SET with compressive stress and tensile strain are plotted and analyzed. Their coulomb diamond areas and coulomb blockade ranges are compared together. Finally, GNR SET with better operation is defined.

The Graphene based single electron transistor (SET) as a coulomb blockade device need to be explored .It is a unique device for high-speed operation in a nano scale regime. A single electron transfers via the coulomb barriers, but its movement may be prevented by coulomb blockade, so its effect is investigated in this research. The conditions of coulomb blockade and its controlling factors such as material, temperature, gate voltage and island length are investigated. At first, the coulomb blockade on fullerene SET as a nano transistor with new material is modeled and compared with experimental data of silicon SET. The comparison study indicates that the coulomb blockade range of fullerene SET is lower than the silicon one. On the other hand, the analysis demonstrates that, temperature and gate voltage play direct associations with zero current SET. In addition, island length and its material effect on coulomb blockade and desired current are achieved by decreasing the coulomb blockade range.