جستجوی مقالات مرتبط با کلیدواژه « ترانزیستور اثرمیدانی تونلی بدون پیوند » در نشریات گروه « برق »

In this paper, a double gate junctionless tunnel field effect transistor (JLTFET) with multi material gate (MMG) structure is presented, and the performance of the transistor has been investigated based on the energy band diagram. All simulations have been carried out using the two dimensional Silvaco Atlas simulator. The effect of the conduction band minima on the abruptness of transition between the ON and OFF states has been hown. Selection of the appropriate value of the gate work function of the proposed structure can give low OFF current, low subthreshold swing, high ON current and improved ION/IOFF. Also, in this paper, the electrical characteristics of MM DG Tunnel FET have been compared with single and dual material gates structures. The proposed structure presented low threshold voltage, high ON current and high ION/IOFF in comparison with the other structures. Finally, high transconductance and high cut-off frequency were observed in multi material double gate device in comparison to other structures.