جستجوی مقالات مرتبط با کلیدواژه « فوتو دیود شکست بهمنی » در نشریات گروه « برق »

In this paper, an avalanche photodiode (InGaAs/Si SACM APD) for detection at 1550 nm is presented. This detector has a simple structure, defined in terms of layers and its main detection parameters such as dark current, photocurrent current, gain and responsivity are optimized. The advantage and distinction of this detector is that its bias voltage is smaller than the models available in the references and its detection parameters can compete with them. This bias voltage is at least 41% lower than other adaptive references in similar conditions. In the index (0.9V_br), the photocurrent is8.3 u A and the dark current is 4.9 nA. At a bias voltage of 25 volts, the photocurrent and the dark current to 51 u A and 21 nA increase compared to the same photodiode. This detector can also be used for special applications that require very low dark current.