Influence of annealing temperature on the nanostructure TiO2-SnO2 prepared by electron gun method on the glass substrate and the aluminum/glass

TiO2-SnO2 thin films were coated on glass and Al / glass substrates by electron gun method. In coating process، the vacuum was 1. 5×10-5 torr. Then، films were annealed at 450، 500 and 550 ˚ C. The crystallographic structure and film morphology were investigated by means of XRD and SEM. The electrical (I-V) and optical properties were studied by the two point props system and UV/Vis/NIR spectrophotometer. The results showed the films under 550 ˚ C were crystalline. The thickness and grain size were 350 and 50 nm respectively. The electrical conductivity in the sample with Al / glass substrate under 550 ˚ C was better than the other samples. When temperature increased، the energy gap decreased from 4. 05 to 4. 03 eV for direct cases.