Improvement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations

We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to improve the drive current of the 5nm FinFET. The improvement of drivecurrent is one of the most important issues in the FinFETs design. We first investigatethe impact of manufacturing process parameters include gate oxide thickness, type ofthe gate oxide, height of fin, and doping of the source and drain region on thresholdvoltage, breakdown voltage, and drive current of the transistor. Then, by selecting theoptimal parameters of the manufacturing process, we improve the drive current of the5nm bulk-FinFET.