Deposition, Characterization and Investigation of Photo-Electrical Properties of Nanostructured Thin Film Mg Doped ZnO by Sol-Gel Method

Zinc oxide (ZnO), which is considered to be a semiconductor material with a straight and wide band gap is great importance in optoelectronic components such as field-effect transistors and such light-emitting diodes as well as optical detecors. In this study, thin film magnesium doped zinc oxide layers with samples containing 6%, 8%, 10% magnesium have been performed by Sol-gel method.The thin film layer was created by spin coating method on silicone base substrate (Si/SiO2). Platinum electrodes are used for electrical connection. In order to synthesize the substance, the prepared layers were placed at 560 °C for 6 hours. The detection of thin film layers are investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM) imaging. The results of the analysis of scanning electron microscopy images show the formation of a cohesive nanostructured structure. In the study of X-ray diffraction of the samples, Mg+2, ZnO and MgO phases were formed. Examination of photo-electrical properties showed that the conductivity of the samples is increased with increasing intensity of ambient light intensity which is suitable for ambient light sensing. In addition, it’s shown that the optical sensitivity is higher in the 6% magnesium consentration.