INVESTIGATION OF SCATTERING -LIMITED MOBILITY IN GALLIUM ARSENIDE SEMICONDUCTOR QUANTUM NANOWIRE

In this work, we aim to investigate the dominant scattering and mobility limiting in a one-dimensional semiconductor device, such as gallium arsenide nanowire. First, the interaction of phonon-electron in a one-dimensional semiconductor device is described and then, using the sheet wave function, some of the carrier scatterings of this system is investigated in terms of quantities such as the density of one-dimensional carriers and temperature. These scatterings include phonon scattering, such as the scattering of acoustic phonons, through the deformation potential coupling, the scattering of acoustic phonons by piezoelectric coupling and the scattering of polar optical phonons, which we first computed and then plotted. We have shown that the mobility limited scattering of carriers in the range of low and high temperatures are acoustic phonon deformation potential scattering and polar longitudinal optical phonon scattering respectively. By increase of linear carrier concentration and nanowire radius the mobility of carriers is enhanced in a given temperature. The dominant scattering in the temperature range (4-300K) is deformation potential and is independent of the carrier concentration and nanowire radius. For high carrier density and nanowire radius the dominant scattering in the temperature range (300-500K) is polar optical phonon scattering