The Body Doping Concentration Effects on the CNTFETs Characteristics

This paper presents the effects of body doping concentration on a carbon nanotube field-effect transistor (CNTFET) with symmetrical coaxial geometry structure, that transistor has a wrapped gate dielectric around the nanotube. At first, Gordon Moore's law is expressed briefly. Then, the limitations and problems after 10nm channel lengths of the traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) scaling are introduced and the structure of carbon nanotube field-effect transistor as a solution for limitations is illustrated. The simulation process is performed, then the effect of body doping concentration is investigated on the current-voltage characteristics, energy profile and electron density of transistor. The simulation is based on a self-consistent solution of the two dimensions Poisson equation and Schrodinger solver. Results show that with increasing body doping concentration level, the transistor output current, energy profile and electron density of transistor will increase and on/off current ratio will decrease.