simulation and investigation of cadmium telluride solar cell and improving its performance by creating an electric field at the back surface

In this paper, the performance of Cadmium Telluride (CdTe) solar cells, which are second generation or thin film solar cells, has been simulated using SCAPS software. The purpose of this paper is to improve the efficiency of the CdTe solar cell. The primary structure of the solar cell consists of Ni, CdTe, CdS, and n-ZnO-Al layers. Therefore, adding a thin layer of tin (SnS) of 0.4 μm to the absorbing layer (CdTe) leads to the creation of a backscattering or an auxiliary electrical field in the direction of the main field, between the adsorbent layer and the buffer layer (CdS). Therefore, adding the layer reduces the recombination of carriers at longer wavelengths by the auxiliary field, and leads to an improvement in the primary structure of the cadmium-telluride solar cell from the values of η=19.09 %, FF= 85.14%, JCS= 25.77 mA/cm2, VOC = 0.87 V to η=22.98 %, FF= 85.99%, JCS= 32.51 mA/Cm2, VOC = 0.82 V.