A A 57-64 GHz High-gain Amplifier using Ultra-wideband Inductors in the IMNs and Optimization by PCA and SDSM

In this paper, the design and optimization of a cascaded common source f our - stage millimeter wave amplifier in a 130 nm CMOS technology has been presented. First, Pi - shaped wideband impedance matching network s (IMNs) were used in the Input/Output Impedance Matching Networks (IOIMNs) and inter - stages . Next , single stubs were converted to symmetrical double stubs in the IOIMNs , an d an ultra - wideband inductor replaced each stub . Ultra - wideband inductors were also used in series in the inter - stage IMNs to achieve a higher gain in the wider frequency bandwidth. Then, t he impedance matrices of IOIMNs and inter - stage were calculated using Planar Circuit Analysis (PCA), which is based on the planar waveguide model and Segmentation/Desegmentation Methods ( SDSM s ) . Finally, by optimizing the length and characteristic impedance of each segment of microstrip line in the IMNs through using an intelligent optimization algorithm in MATLAB , the excellent IMNs were designed , which resulted in an amplifier with 푆 11 min = − 25 . 3 푑퐵 , 푆 22 min = − 20 . 6 푑퐵 , and 푆 21 max = 30 . 5 푑퐵 in the frequency range of 57 - 64 GHz. With this design method , in addition to incorporating the effect of discontinuities, the fringing fields at the edges of the microstrip as well as the conductor and dielectric losses , the effect of dispersion would be minimized by choosing a substrate whose thickness is much sma ller than the wavelength and its relative permittivity is low.