Effect of Vertical Magnetic Field on the Electronic and Transport Properties of Armchair Silicene Nanoribbons

In this paper, the electronic and transport properties of three groups of armchair Silicene nanoribbons were investigated in the presence of a vertical magnetic field. The Silicene nanoribbons were modeled with N=5-7 silicon atoms in width, each having different band gaps. Vertical magnetic field with strengths of h=0.1 eV, 0.2 eV, and 0.3 eV were applied to the nanoribbons. By applying a vertical magnetic field, changes were observed in the electronic arrangement of the nanoribbons. As a result, the electronic and transport properties of nanoribbons such as emission spectrum, band structure, and current-voltage (I-V) characteristics were changed. The results indicated that applying a vertical magnetic field to the armchair silicene nanoribbons subjected to electric potential difference enhances the current. To extract the electronic and transport properties of the nanoribbons, a tight-binding model coupled with the non-equilibrium Green’s function formalism was employed.