Simulation of doping type and current density effects on porous silicon growth by modified limited diffusion aggregation method

In this paper we improve the limited diffusion aggregation model to study and simulate effects of doping type and current density on the structure of porous silicon.For doping type effects, sticking coefficient and for current density effect, a mean field parameter was applied to the limited diffusion aggregation model. The results of our simulasion show that sticking coefficient influences pore thickness, while mean field parameter controls the tree or rod characteristic, of pores. These theoretical findings are in agreement with experimental abservations.