Fulx-pinning mechanism and activation energy in malic acid-doped MgB2

Fulx-pinning mechanism and activation energy of MgB2 doped with 10 wt % malic- acid has been investigated by measurement of critical current density and resistivity as a function of magnetic fields and temperatures. The field dependence of the critical current density, Jc(B), was analyzed within the collective pinning model. A crossover field, Bsb, from the single vortex to the small vortex bundle-pinning regime was observed. For sintered sample, the temperature dependence of Bsb(T) at low temperature is in good agreement with the δℓ pinning mechanism, i.e., pinning associated with charge-carrier mean free path fluctuation. The activation energy was decreased linearly by increasing magnetic field.