Design, simulation and fabrication of InSb infrared tracker sensors by Ion Implantation

This study has shown that if a photo detector which was made by Be+ implantation in InSb p+-n is protected by a SiO2 layer، better Electro- optical results will be gained in contrast with the case where it has direct implantation and does not have SiO2 layer. The dose and the energy of the of Gained photodiode by Be+ ion were 4×1014 cm2 and 100 KeV. I-V while a layer with the thickness of 0. 25 μm was covered over InSb p+-n in the thermal condition of 350 ˚C within 30 min and with the Leakage current of 200 nA/cm2 in the 50mV Reverse bias. The detectivity in the peak value was 9×1010 cmHz1/2W-1.