مجید بابایی نیک

This article examines the challenges of energy management in microgrids, considering the uncertainties associated with renewable energy sources, dynamic demand, and the presence of various devices such as batteries, distributed generation sources, and electric vehicles. The article introduces a complex optimization model designed for microgrid operations. This model focuses on mitigating the challenges of integrating power electronic generation units, managing demand within microgrids, and incorporating small-scale renewable energy sources. The goal of this model is to minimize various costs associated with energy losses, electricity purchases, load reduction, distributed generation operations, and battery costs over a 24-hour period. Simulations conducted on a test system demonstrate that the proposed model is effective, achieving up to a 20% reduction in microgrid operational costs. This approach provides an effective framework for enhancing the flexibility and efficiency of microgrid energy management, and the findings indicate that it outperforms comparative methods by a margin of at least 8%, demonstrating its effectiveness in improving critical indices in the microgrid system.

Pseudo-differential distributed amplifier (PDDA) is an effective method in increasing the bandwidth of a broadband amplifier. This study investigates different methods with same power consumption and chip area for enhancement gain-bandwidth in a cascaded pseudo differential distributed amplifier (CPDDA) and compare them.The choice of optimal design depends on the gmRo parameter of the PDA cells. The proposed circuits have been implemented in 0.18-μm RF-CMOS technology. The simulation results show that in this technology, in order to obtain a 0-40GHz bandwidth that requires low gmof the PDA's cell-transistor, two cascaded PDDA with three stages has a better performance than a three cascaded PDDA with two stages. In two cascaded PDDA with three stages structure, a gain of 10dB can be achieved in the bandwidth of 40GHz in 0.18-μm RF-CMOS technology. In this amplifier, parameters S11, S22, S12, are -12, -10, and -16 dB, respectively and noise figure is equal to 4.6 and P1dB is +3.5dBm. This amplifier has 230mW power consumption and a chip area of 0.63 mm2. These values show the good performance of the proposed amplifier, compared to the results of previous works on similar amplifiers.