Sensitivity Improvment Of Hydrophone Employing Suspended and Comb-Drived Gate of Transistor in Low Frequncies

In this paper a new hydrophone sensor in low frequency has been designed and simulated. Transducer mechanism is based on variation of gate source capacitor in MOSFET transistor. Gate of transistor is suspended using two beams. In response to incoming acoustic wave, gate will go under deformation and cause variation of gate-source capacitor. As a result, acoustic wave will alter drain source current of MOSFET transistor. In contrast to privies studies, instead of using uniform rectangular gate, comb-drive gate is proposed so as to increase the gate-source capacitor. At beginning, structure and parameters such as pressure, stress and thickness of gate carried out. Finally, for different material the sensitivity is calculated and compared with previous studies. By employing finite-element-method simulation software sensitivity and bandwidth has been calculated. Simulation results indicate high sensitivity around -165dB (ref: 1V/1µPa) in low frequencies. Proposed hydrophone shows flat frequency response in rang of 10-11400 Hz.