Electronic Transport and Electrical Conductivity of charge carriers in p-type GaAs monocrystals in the wide temperature range (100-400) K

Gallium arsenide is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure. GaAs is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. From this view point, study of the electronic properties of GaAs single crystals is of prime importance. In this experimental work, electrical conductivity of two kinds of p-type GaAs samples each doped with Cr and Fe have been studied in the wide temperature range (100-400) K. Apart from temperature dependency of mobility of charge carriers also different predominant scattering mechanisms occurring in these crystals have been given.