Characterisation of p-Si/SiGe/Si inverted remote doped structures using X-ray and electrical techniques

In this work, the epitaxially grown, lattice–matched p-Si/Si1-xGex/Si inverted remote doped structures have been characterized using X-ray and electrical techniques. The Si cup layer thickness () and Ge content (x) have been determined from computer simulation of intensity and angular sepration of (004) peaks observed in the X-ray diffraction pattern due to misorientaion of corresponding Bragg planes of Si and SiGe layers. On the other hand, a quasi two dimensional hole gas (2DHG) is formed in the compressively strained alloy of these structures and its areal density (ns) has been measured by Hall expriment and can be controlled by applying a voltage () to the artificial gate. In the electrical technique, x and lc chractristics have been obtained using theoretical calculations of the linear dependence of ns versus. Finally, the uncertainity and partial inconsistent of the results have been explained in terms of the affecting effects.